Modeling of light scattering from structures with particle contaminants

Brent Martin Nebeker; Greg W. Starr; E. Dan Hirleman

doi:10.1117/12.256198

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4 November 1996 Modeling of light scattering from structures with particle contaminants

Brent Martin Nebeker, Greg W. Starr, E. Dan Hirleman

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Proceedings Volume 2862, Flatness, Roughness, and Discrete Defect Characterization for Computer Disks, Wafers, and Flat Panel Displays; (1996) https://doi.org/10.1117/12.256198
Event: SPIE's 1996 International Symposium on Optical Science, Engineering, and Instrumentation, 1996, Denver, CO, United States

Abstract

Detection of particle contaminants on patterned wafers is important for increasing yield during the silicon wafer manufacturing process. Surface scanning inspection systems are used to detect contamination by measuring scattering from coherent light incident on the wafer surfaces. To aid in the design of these inspection systems, a code based on the coupled-dipole method has been developed to predict scattering from features on surfaces. To validate the code, we show comparisons between experimental results and numerical predictions of scattering characteristics of patterned structures found on the Arizona State University/Semiconductor Research Corporation block of the SEMATECH patterned wafer defect standard die developed by VLSI Standards, Inc. The patterned structures considered here are SiO₂ line features and cornered features on silicon substrates. Particle contamination is emulated with deposition of PSL spheres near these structures. Comparisons of the differential scattering cross-section are made between experiment and the computational results. Close agreement within a factor of 2 to 3 is found for the cases considered.

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Brent Martin Nebeker, Greg W. Starr, and E. Dan Hirleman "Modeling of light scattering from structures with particle contaminants", Proc. SPIE 2862, Flatness, Roughness, and Discrete Defect Characterization for Computer Disks, Wafers, and Flat Panel Displays, (4 November 1996); https://doi.org/10.1117/12.256198

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