It is of great importance for the formation of p-n junction in semiconductors by penetrating some impurities through the depth near the surface, so it has long been paid attention to control the concentration distribution of impurities during the diffusion process. In recent years, ionic carburizing, and ion bombardment penetration etc. for the treatment of metal surface have also attracted by material sciences. It requires that the diffusion depth and the diffusion time of the impurities should be under precise control. Different methods, such as the method of radioisotopic detection and the method of chemical analysis have been adopted, however, the reports of different workers are very different, especially in the real time measurement, so, finding new method is never ending. In 1984, H. Fenichel have performed experiments on the solutions of table salt and sugar with the method of holographic interferometry. As for metals which are opaque for the visible light, but they become transparent by making them into a very thin film so that, in principle, the diffusion of atoms within a film is capable of measure by holographic interferometry. Alternatively, the electromagnetic waves within 1 - 70 micrometers wavelengths may be utilized, some materials, such as high purified germanium and silicon are good materials for infrared transmission. Some fluorides of alkaline-earth metals have high transmittance in the range of 1 - 8 micrometers , the concentration of impurities in the semiconductor and metal surface treatment are of 1015 - 1020 atoms per cubic cm, which is capable of detection.