27 February 1997 Semiconductor diodes as neutron detectors for position-sensitive measurements and for application in personal neutron dosimetry
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Proceedings Volume 2867, International Conference Neutrons in Research and Industry; (1997) https://doi.org/10.1117/12.267916
Event: Fifth International Conference on Applications of Nuclear Techniques: Neutrons in Research and Industry, 1996, Crete, Greece
Abstract
A new design for a position-sensitive detector system for thermal neutrons is introduced. The detection principle with a thin 6LiF converter on the surface of a semiconductor diode is described. In experiments with thermal neutrons, a spatial resolution of 1.25 mm was obtained. The detector is insensitive to (gamma) -rays with energies up to 1.5 MeV. The design of a detector with an improvement of the detection efficiency for thermal neutrons from 2.5 percent up to 35 percent is also proposed and the present state of the process development for its fabrication is described.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Balzhaeuser, A. Dehoff, R. Engels, F. Hoengesberg, J. Lauter, Hans Luth, M. Reetz, Richard Reinartz, H. Richter, Jim Schelten, Th. Schmitz, A. Steffen, Th. Vockenberg, "Semiconductor diodes as neutron detectors for position-sensitive measurements and for application in personal neutron dosimetry", Proc. SPIE 2867, International Conference Neutrons in Research and Industry, (27 February 1997); doi: 10.1117/12.267916; https://doi.org/10.1117/12.267916
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