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16 August 1996 Effect of crystalline orientation on photoelastic constant of Si single crystal
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Proceedings Volume 2873, International Symposium on Polarization Analysis and Applications to Device Technology; (1996) https://doi.org/10.1117/12.246229
Event: International Symposium on Polarization Analysis and Applications to Device Technology, 1996, Yokohama, Japan
Abstract
We developed an optical birefringence measurement equipment by using a photoelastic modulator and a polarized laser. A He-Ne infrared laser is used as a light source to measure the optical birefringence in silicon wafers. We explain the theory and process of the measurement of stress in silicon wafers. The magnitude of principal stress difference and also the direction of the principal stress are obtained simultaneously and quantitatively using our experiment. The optical birefringence of (100), (111) and (110) face silicon stressed specimens were measured. From the experimental results, the photoelastic constant depends on the crystalline orientation. By the stress-strain analysis of silicon single crystal, it was found that the relation between the principal strain difference and the retardation was independent of crystalline orientation.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenji Gomi and Yasushi Niitsu "Effect of crystalline orientation on photoelastic constant of Si single crystal", Proc. SPIE 2873, International Symposium on Polarization Analysis and Applications to Device Technology, (16 August 1996); https://doi.org/10.1117/12.246229
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