16 August 1996 Fine characterization of ITO layers by spectroscopic ellipsometry
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Proceedings Volume 2873, International Symposium on Polarization Analysis and Applications to Device Technology; (1996) https://doi.org/10.1117/12.246246
Event: International Symposium on Polarization Analysis and Applications to Device Technology, 1996, Yokohama, Japan
Abstract
Indium tin oxide films (ITO) are characterized precisely by spectroscopic ellipsometry which determines not only the thickness of the layers but also the optical indices in a large spectral range. The quality of the ITO films is checked by the transparency of the layers in the visible range 0.4 to 0.6 micrometers . Indeed, target degradation is detected by the occurrence of an absorption band in this region. The electrical conductivity of the layer can also be deduced by the Drude model applied to the absorption in the infrared region. Moreover, spectroscopic ellipsometry can give all these information on all the surface of the panels, checking at the same time the homogeneity and the stability of the deposition process. Different experimental examples will be presented and discussed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pierre Boher, Pierre Boher, Christophe Defranoux, Christophe Defranoux, Jean-Philippe Piel, Jean-Philippe Piel, Jean-Louis P. Stehle, Jean-Louis P. Stehle, Y. Suzuki, Y. Suzuki, } "Fine characterization of ITO layers by spectroscopic ellipsometry", Proc. SPIE 2873, International Symposium on Polarization Analysis and Applications to Device Technology, (16 August 1996); doi: 10.1117/12.246246; https://doi.org/10.1117/12.246246
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