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16 August 1996 In-situ ultrahigh vacuum spectroscopic ellipsometry
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Proceedings Volume 2873, International Symposium on Polarization Analysis and Applications to Device Technology; (1996) https://doi.org/10.1117/12.246213
Event: International Symposium on Polarization Analysis and Applications to Device Technology, 1996, Yokohama, Japan
Abstract
Polarization modulated spectroellipsometer was utilized to monitor, in-situ, deposition of Ag on Si substrate. The angle of incidence was determined using a Si substrate covered with native oxide. In the wavelength region of 550 nm to 700 nm, the ambiguity of the angle of incidence was within 0.2 deg. A plasma resonance peak manifested in reflectance spectrum around 350 nm increased and shifted to shorter wavelength as the deposition time increased from 1 sec to 10 sec. (Delta) (Psi) trajectory approached to a simulation curve of a continuous film as the deposition time increased to 40 sec where the film thickness was estimated to be 20 nm.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tomoyuki Fukazawa, Kazuki Ishihara, Yoichi Hoshi, and Shuichi Kawabata "In-situ ultrahigh vacuum spectroscopic ellipsometry", Proc. SPIE 2873, International Symposium on Polarization Analysis and Applications to Device Technology, (16 August 1996); https://doi.org/10.1117/12.246213
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