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16 August 1996 Initial plasma oxidation of silicon studied by real-time ellipsometry
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Proceedings Volume 2873, International Symposium on Polarization Analysis and Applications to Device Technology; (1996) https://doi.org/10.1117/12.246232
Event: International Symposium on Polarization Analysis and Applications to Device Technology, 1996, Yokohama, Japan
Abstract
We have studied plasma oxidation of silicon surfaces using real-time ellipsometry. The real time observation shows a strong dependence of the plasma oxidation on the plasma density and dc bias. The results clearly reveal that the direction reaction of both positively and negatively charged species with the silicon surface dominates the plasma oxidation process in the ultra thin oxide film region. The effects of temperature and surface orientation of the substrate are also discussed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahiro Kitajima, I. Kamioka, T. Kurashina, and Keikichi G. Nakamura "Initial plasma oxidation of silicon studied by real-time ellipsometry", Proc. SPIE 2873, International Symposium on Polarization Analysis and Applications to Device Technology, (16 August 1996); https://doi.org/10.1117/12.246232
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