16 August 1996 Spectroellipsometric study of sulphur passivation of InAs
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Proceedings Volume 2873, International Symposium on Polarization Analysis and Applications to Device Technology; (1996) https://doi.org/10.1117/12.246242
Event: International Symposium on Polarization Analysis and Applications to Device Technology, 1996, Yokohama, Japan
Abstract
Sulphur passivation of InAs is studied by spectroscopic ellipsometry. Time dependence of (Psi) and (Delta) of InAs surface after etching as well as after sulphur passivation has been measured in air. The empirical dielectric function for amorphous material proposed in the previous paper has been applied to the surface. Differences between dielectric function and thickness of surface layers with and without passivation and their time dependence after each treatment have clearly been observed.
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Tomuo Yamaguchi, K. Ohshimo, Ahalapitiya Hewage Jayatissa, M. Aoyama, X. Y. Gong, Toshihiko Makino, Hirofumi Kan, "Spectroellipsometric study of sulphur passivation of InAs", Proc. SPIE 2873, International Symposium on Polarization Analysis and Applications to Device Technology, (16 August 1996); doi: 10.1117/12.246242; https://doi.org/10.1117/12.246242
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