12 September 1996 Back side emission microscopy for failure analysis
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Due to increasing complex structures, such as multiple metal layers, high density circuits, and wide metal buses, on a die of an integrated circuit (IC) and specially packaged devices, such as flip chips and lead on chips, the traditional front side emission microscopy is no longer effective or cannot be applied. The back side emission microscopy is the alternative. It is a very useful, necessary, and complementary method to the front side emission microscopy in failure analysis. In this paper, photon emission mechanism and spectrum from a silicon die are first discussed. It explains that the emission intensity for the most occurred two emission types (forward and reverse biased junctions) from a die back side is about the same as or comparative to that from the die front side. Next, the five factors which mostly affect the emission intensity from the die back side are discussed. Last, several examples are given.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nevil M. Wu, Nevil M. Wu, Kenneth Tang, Kenneth Tang, James H. Lin, James H. Lin, "Back side emission microscopy for failure analysis", Proc. SPIE 2874, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II, (12 September 1996); doi: 10.1117/12.250832; https://doi.org/10.1117/12.250832


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