12 September 1996 Determination of critical process steps for enhanced yield improvement
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This paper presents a new method to isolate process steps causing performance spread of analogue or digital circuits. It is based on the analysis of process control or device parameters, sampled over one or more wafers of one or more lots. The analysis includes a physical approach of the parameters combined with a correlation coefficient study. This methodology which links parameters to process quantities, results in short-loop processing as well as in enhanced yield improvement.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. B. Duluc, J. B. Duluc, Thomas Zimmer, Thomas Zimmer, N. Lewis, N. Lewis, Jean Paul Dom, Jean Paul Dom, } "Determination of critical process steps for enhanced yield improvement", Proc. SPIE 2874, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II, (12 September 1996); doi: 10.1117/12.250852; https://doi.org/10.1117/12.250852


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