12 September 1996 Inter- and intra-die polysilicon critical dimension variation
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Abstract
A methodology has been developed as part of a statistical metrology framework (1) to assess the relative range and distribution of intra-die, or die-level, polysilicon critical dimension variation as opposed to wafer-level, or inter-die, poly-CD variation; (2) to identify the key layout factors involved in poly-CD intra-die variation; and (3) to develop first-order semi-empirical models for poly-CD variation. A new approach utilizing multivariate analysis of variance methods is described to model the die- and wafer- level variation components. We show that pattern dependent variation is approximately twice as large as wafer-level variation. In addition, we find that spatial position plays a strong role: the first-order pattern dependent variation model (or die 'signature') shows a strong dependence on spatial position across the wafer, and individual components of the model demonstrate different spatial position sensitivities.
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Brian Stine, Duane S. Boning, James E. Chung, David A. Bell, Edward Equi, "Inter- and intra-die polysilicon critical dimension variation", Proc. SPIE 2874, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II, (12 September 1996); doi: 10.1117/12.250826; https://doi.org/10.1117/12.250826
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