Modern concept of focused ion beam techniques for reliability analysis in VLSI manufacturing

Dumitru Gh. Ulieru

doi:10.1117/12.250847

12 September 1996 Modern concept of focused ion beam techniques for reliability analysis in VLSI manufacturing

Dumitru Gh. Ulieru

Proceedings Volume 2874, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II; (1996) https://doi.org/10.1117/12.250847
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

This paper presents the modern concept of the new application of focused ion beam techniques to some failure analysis such as microscopic selective cross sectioning and in-situ observation of the cross section, respective to the observation of the aluminum microstructure. The system configuration is presented with main functions first of all. The procedure shows for microscopic cross sectioning and in- situ observation uses etching function and the SIM function too. This permits us to do new approaches for failure analysis and process monitoring such as microscopic cross- sectioning and in-situ observation which have been achieved by means of the combination of the microscope etching and the SIM (scanning ion microscope) functions. The examples of analysis for electromigration failure and two process anomalies have been shown. The new method is not only less time consuming but easier to use than the conventional methods and also has new functions such as multiple microscopic cross-sectioning and continuous micro-slicing. The observation of aluminum microstructure has been achieved by means of the SIM function. The comparison of SIM and TEM images has been achieved and it has been shown that the sum of SIM images at different titled angles is useful to analyze grain size distributions. In practice even a single image of SIM is enough to analyze grain size distributions. The comparison of SIM and SEM images has shown that the SEM image does not show the real microstructure of aluminum. Therefore we should not use SEM as a tool for microstructure analysis. The new method is less time consuming and easier to use than the conventional TEM method. As an extension of this new concept of analysis by FEB the combination of both approach modes it is possible to observe the microstructure at the cross section of aluminum. This concept, successfully recommended for silicon technologists in VLSI manufacturing, makes some failure analysis simpler and less time consuming.

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Dumitru Gh. Ulieru "Modern concept of focused ion beam techniques for reliability analysis in VLSI manufacturing", Proc. SPIE 2874, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II, (12 September 1996); https://doi.org/10.1117/12.250847

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KEYWORDS

Aluminum

Etching

Scanning electron microscopy

Transmission electron microscopy

Failure analysis

Ions

Very large scale integration

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