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13 September 1996 Comparison of spin-on materials in IMD planarization
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This paper describes the characterization of an etchback process for the new AlliedSignal's Accuspin 418 and Hitachi Chemical's HSG R7-13 low dielectric constant silsesquioxane spin-on polymers and the application to the inter-metal dielectric scheme of a 0.35 micrometers device. A comparison with a conventional polysiloxane spin-on glass (AlliedSignal's Accuglass 214) is also briefly discussed. The predominant factor affecting the selectivity of PECVD oxide to spin-on polymer is the CHF3CF4 flow. A low selectivity in which the spin-on polymer etches faster was found to rid of spin-on polymer on top of large metal features where vias may be cut while simultaneously leaving behind sufficient oxide on top of metal lines and the spin-on polymer in the metal spaces. After etchback, a thick PECVD oxide is deposited and planarized by chemical mechanical polishing.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Simon Y. M. Chooi, Chew-Hoe Ang, Jia Zhen Zheng, and Lap Hung Chan "Comparison of spin-on materials in IMD planarization", Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996);


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