Computer-aided optimization of ion-implanted charge bump parameters for rf silicon SDR

Shankar P. Pati; A. K. Panda

doi:10.1117/12.250868

13 September 1996 Computer-aided optimization of ion-implanted charge bump parameters for rf silicon SDR

Shankar P. Pati, A. K. Panda

Proceedings Volume 2875, Microelectronic Device and Multilevel Interconnection Technology II; (1996) https://doi.org/10.1117/12.250868
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

IMPATT diodes can produce high power RF oscillation between a wide range of frequencies and excel some other solid state devices. The device technology for fabrication of silicon SDR diode is now very much advanced. The device efficiency and RF power output register sharp fall when the frequency of operation is enhanced to high values. Introduction of charge bump near the junction leading to formation of low- high-low profile by using ion implantation technique can be used to restore high efficiency and high power. The purpose of this paper is to study the ion implantation profiles of a low-high-low structure SDR and to suggest the optimized ion implantation parameters by using a computer simulation method developed by us. The method gives the best ion- implantation parameters of the charge bump suitable for use in fabrication of IMPATT diodes. The method is a generalized one and can be used to design high efficiency and high power silicon SDR for any frequency band. This can add to microelectronic manufacturing technologies.

Citation Download Citation

Shankar P. Pati and A. K. Panda "Computer-aided optimization of ion-implanted charge bump parameters for rf silicon SDR", Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); https://doi.org/10.1117/12.250868

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