13 September 1996 Materials and processing issues in the development of N2O/NO-based ultrathin oxynitride gate dielectrics for CMOS ULSI applications
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Abstract
This paper reviews recent developments in N2O- and NO- based oxynitride gate dielectrics for CMOS ULSI applications. The motivations and significant advantages of N2O/NO-based ultrathin oxynitride gate dielectrics for dual-gate CMOS ULSI are reviewed. Results will be presented to demonstrate the superior device reliability of ultra thin N2O/NO oxides over the control oxides, with particular focus on boron diffusion barrier properties, TDDB, and MOSFET hot carrier immunity.
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Byeong Y. Kim, Byeong Y. Kim, Dirk Wristers, Dirk Wristers, Dim-Lee Kwong, Dim-Lee Kwong, } "Materials and processing issues in the development of N2O/NO-based ultrathin oxynitride gate dielectrics for CMOS ULSI applications", Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); doi: 10.1117/12.250864; https://doi.org/10.1117/12.250864
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