13 September 1996 Reliability scaling in deep submicron MOSFETs
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This paper reviews scaled reliability of deep sub-micron MOSFETs, including hot-carrier effects and oxide-breakdown. On the point of practical device design, the former constrains the maximum applicable voltage with the scaling factor of k-1/2. The latter give that with the scaling fact of k-1. It is shown that the limiting factor of operating voltage switches from hot-carrier effects to thin oxide reliability at a 0.25 micrometers device.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadahiko Horiuchi, Hiroshi Ito, Naohiko Kimizuka, "Reliability scaling in deep submicron MOSFETs", Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); doi: 10.1117/12.250856; https://doi.org/10.1117/12.250856

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