13 September 1996 Reliability scaling in deep submicron MOSFETs
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Abstract
This paper reviews scaled reliability of deep sub-micron MOSFETs, including hot-carrier effects and oxide-breakdown. On the point of practical device design, the former constrains the maximum applicable voltage with the scaling factor of k-1/2. The latter give that with the scaling fact of k-1. It is shown that the limiting factor of operating voltage switches from hot-carrier effects to thin oxide reliability at a 0.25 micrometers device.
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Tadahiko Horiuchi, Tadahiko Horiuchi, Hiroshi Ito, Hiroshi Ito, Naohiko Kimizuka, Naohiko Kimizuka, } "Reliability scaling in deep submicron MOSFETs", Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); doi: 10.1117/12.250856; https://doi.org/10.1117/12.250856
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