Scaling considerations of interpoly oxide-nitride-oxide dielectric for high-density DRAM applications

Zhijian Ma; Jeong Yeol Choi; Chuen-Der Lien

doi:10.1117/12.250866

13 September 1996 Scaling considerations of interpoly oxide-nitride-oxide dielectric for high-density DRAM applications

Zhijian Ma, Jeong Yeol Choi, Chuen-Der Lien

Proceedings Volume 2875, Microelectronic Device and Multilevel Interconnection Technology II; (1996) https://doi.org/10.1117/12.250866
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

Highly reliable thin oxide-nitride-oxide (ONO) stacked dielectrics with oxide-equivalent thickness T_ox,eq in the range of 34 - 68 angstroms were fabricated using conventional furnaces and an RTA machine. Rapid Thermal Nitridation (RTN) in NH₃ ambient of smooth poly-Si prior to Si₂N₄ deposition is found to be critical for improving dielectric integrity and low-field leakage current of the ONO stacked dielectrics. This RTN process also significantly improves oxygen diffusion resistance of ultra- thin Si₂N₄ film. As a result, 22 angstroms LPCVD Si₂N₄ is adequate to sustain wet oxidation at 800 degree(s)C without any oxygen diffusion through it, which results in a manufacturable and reliable T_ox,eq equals 45 angstroms ONO stacked dielectric. By using rugged poly-Si as a bottom electrode plus RTN process, ONO stacked dielectric can be scaled down to about T_ox,eq equals 34 angstroms without any leakage or reliability problems.

Citation Download Citation

Zhijian Ma, Jeong Yeol Choi, and Chuen-Der Lien "Scaling considerations of interpoly oxide-nitride-oxide dielectric for high-density DRAM applications", Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); https://doi.org/10.1117/12.250866

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