13 September 1996 Submicron metal etch integration study
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Abstract
Recent progression toward low pressure metal etching has been driven primarily by the reduction in spacing between features and the corresponding increase in aspect ratio of the areas to be etched. Key limitations of etching small feature spaces (< 0.6 micrometers ) include the aspect ratio (> 2:1) and pattern density variations between isolated and dense lines. This paper addresses the development and integration of a production worthy sub-micron metal etch process. The work performed focused on statistical design of experiments to determine the critical factors controlling the etching of small metal line spaces along with the overall characteristics of the final post metal etch process. Full integration included analysis of photo resist strip, passivation and corrosion control. The process as designed, contrary to common practice, cleared small space geometries first followed by the clearing of open field metal. This approach eliminates the common pattern density dependency of metal etch and provided a simplified process for implementation into manufacturing.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Simon Gonzales, Simon Gonzales, Jesus Quijada, Jesus Quijada, Gordon Grivna, Gordon Grivna, } "Submicron metal etch integration study", Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); doi: 10.1117/12.250879; https://doi.org/10.1117/12.250879
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