13 September 1996 Tungsten plug contact and via integration for subhalf-micron technology
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Abstract
Tungsten plug technology has been used extensively for multilevel interconnect in sub-half-micron semiconductor processes. The major issue encountered in tungsten plug integration is contact resistance especially to the p+ Si area and via resistance. In this study, investigations were carried out on several aspects of contact cleaning, plug implant, and barrier metal deposition. The test vehicle utilized is in-house logic test chip with 0.35 micrometers design rule. Contact resistance of tungsten plug was found to be strongly correlated with contact cleaning, plug implant and Ti deposition thickness. Ar sputter clean was shown to have detrimental effect towards contact and via resistances. Plug implant was shown to be a necessary step for p+ contact resistance control. Thicker Ti deposition was also shown to be crucial in improving contact resistance.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harianto Wong, Chetlur S. Sreekanth, Lap Hung Chan, "Tungsten plug contact and via integration for subhalf-micron technology", Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); doi: 10.1117/12.250886; https://doi.org/10.1117/12.250886
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KEYWORDS
Resistance

Tin

Tungsten

Etching

Metals

Collimation

Argon

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