13 September 1996 Dynamics of recrystallization and melting of implanted silicon at irradiation by powerful light pulses
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Abstract
The mechanism and the main features of the effect of anisotropic local melting of semiconductor surfaces which can be observed at definite regimes of homogeneous irradiation by powerful pulses of coherent and incoherent light are investigated. The dynamics of this effect was studied for the first time. Using rapid filming microphotos of the silicon surface were taken. On implanted silicon, the dynamics of reflection of the probing He-Ne laser radiation under heating with powerful optical irradiation is measured. The results can be explained by the different degree of semiconductor superheating with respect to the equilibrium temperature of melting. It is demonstrated that under certain conditions light pulse itself generates centers for the formation of liquid nuclei.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yakh'ya V. Fattakhov, Mansur F. Galyautdinov, Tat'yana N. L'vova, Il'dus B. Khaibullin, "Dynamics of recrystallization and melting of implanted silicon at irradiation by powerful light pulses", Proc. SPIE 2876, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II, (13 September 1996); doi: 10.1117/12.250917; https://doi.org/10.1117/12.250917
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KEYWORDS
Silicon

Semiconductors

Lamps

Semiconductor lasers

Liquids

Semiconducting wafers

Radon

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