13 September 1996 Increased process stability for CVD tungsten via in-situ particle monitoring and upstream process control
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Abstract
Upstream control and in-situ defect monitoring have been successfully implemented to track and improve particle performance for CVD tungsten films. An in-situ 'dark field' particle sensor was used to monitor process defect levels during tungsten deposition. The sensor was mounted directly below the CVD tungsten deposition chamber on the foreline. Information from the in-situ particle sensor and the CVD system process parameter analog output were routed to a stand alone computer where the incoming signals were recorded. In-situ particle and process parameter signals were monitored using the standard production recipe for tungsten deposition. From this data the internal variables (process parameters) affecting in-situ particle levels were determined. The internal factors were varied over a selected operating range and the in-situ particle levels quantified for each factor. These results were used to define the CVD tungsten process operating window in terms of in-situ defectivity. Additionally, other external sources were identified as contributors to in-situ defectivity.
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Karl Huber, Karl Huber, Tim DeSanti, Tim DeSanti, Steve Felker, Steve Felker, } "Increased process stability for CVD tungsten via in-situ particle monitoring and upstream process control", Proc. SPIE 2876, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II, (13 September 1996); doi: 10.1117/12.250909; https://doi.org/10.1117/12.250909
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