Noncontact sheet resistance measurements for doped polysilicon process control

Walter H. Johnson Sr.; Le Nguyen; Robert W. Schanzer; Tim Campbell; Jim White

doi:10.1117/12.250900

13 September 1996 Noncontact sheet resistance measurements for doped polysilicon process control

Walter H. Johnson Sr., Le Nguyen, Robert W. Schanzer, Tim Campbell, Jim White

Proceedings Volume 2876, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II; (1996) https://doi.org/10.1117/12.250900
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

An investigation was undertaken to evaluate the potential of using mutual inductance (eddy current) measurements to determine doping levels in polycrystalline silicon (polysilicon). The main advantage of eddy current measurements is that they are non-contact and the oxide which grows on the polysilicon is transparent to the magnetic fields used to generate the eddy currents. This allows the doped polysilicon sample to be measured immediately following the doping process and eliminates the need to etch the oxide which must be removed for the traditional four-point probe measurement. The elimination of the HF acid etch step not only saves on materials costs, it removes a potentially hazardous step from the process and does away with the need to dispose of a hazardous waste. This paper correlates the eddy current measurements with traditional four-point probe measurements, and investigates the influences of the substrate and backside polysilicon film sheet resistances on the frontside measurement.

Citation Download Citation

Walter H. Johnson Sr., Le Nguyen, Robert W. Schanzer, Tim Campbell, and Jim White "Noncontact sheet resistance measurements for doped polysilicon process control", Proc. SPIE 2876, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II, (13 September 1996); https://doi.org/10.1117/12.250900

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