13 September 1996 Process monitoring using surface charge profiling (SCP) method
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Abstract
This paper is concerned with the method of surface charge profiling (SCP) developed for in-line monitoring of front- end processes in semiconductor manufacturing. In this study a commercial SCP system is used to monitor wafer cleans in terms of oxide/hydrogen coverage of Si surfaces following cleaning with emphasis on HF last cleaning sequences. Moreover, metal contamination of bare silicon surfaces and deactivation of boron dopant in the near-surface region of p-type Si wafers are monitored. Finally, the unique capability of SCP in monitoring time-dependent evolution of characteristics of Si surfaces exposed to various ambients is demonstrated.
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Jerzy Ruzyllo, Jerzy Ruzyllo, P. Roman, P. Roman, J. Staffa, J. Staffa, Ismail Kashkoush, Ismail Kashkoush, Emil Kamieniecki, Emil Kamieniecki, } "Process monitoring using surface charge profiling (SCP) method", Proc. SPIE 2876, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II, (13 September 1996); doi: 10.1117/12.250899; https://doi.org/10.1117/12.250899
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