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13 September 1996 Process monitoring using surface charge profiling (SCP) method
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This paper is concerned with the method of surface charge profiling (SCP) developed for in-line monitoring of front- end processes in semiconductor manufacturing. In this study a commercial SCP system is used to monitor wafer cleans in terms of oxide/hydrogen coverage of Si surfaces following cleaning with emphasis on HF last cleaning sequences. Moreover, metal contamination of bare silicon surfaces and deactivation of boron dopant in the near-surface region of p-type Si wafers are monitored. Finally, the unique capability of SCP in monitoring time-dependent evolution of characteristics of Si surfaces exposed to various ambients is demonstrated.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerzy Ruzyllo, P. Roman, J. Staffa, Ismail Kashkoush, and Emil Kamieniecki "Process monitoring using surface charge profiling (SCP) method", Proc. SPIE 2876, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II, (13 September 1996);

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