13 September 1996 Optical characterization of amorphous and polycrystalline silicon films
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This paper describes a methodology that has been incorporated into a fully integrated measurement system, the n&k Analyzer, that determines simultaneously the thickness, energy band gap, and n and k spectra (from 190 to 900 nm) of various forms of silicon, i.e., a-Si, poly-Si films, and mixtures of a-Si and poly-Si films. Additionally, the system also measures the average surface roughness. In turn, the n and k spectra of such films can be correlated to processing conditions, temperature being the most important one in LPCVD method. The n&k Analyzer can be used to identify the amorphous-polycrystalline transition regime and characterization of films produced in this regime.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Effiong Ibok, Effiong Ibok, Shyam Garg, Shyam Garg, George G. Li, George G. Li, A. Rahim Forouhi, A. Rahim Forouhi, Iris Bloomer, Iris Bloomer, Joel W. Ager, Joel W. Ager, } "Optical characterization of amorphous and polycrystalline silicon films", Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); doi: 10.1117/12.250929; https://doi.org/10.1117/12.250929

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