13 September 1996 Optical characterization of amorphous and polycrystalline silicon films
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Abstract
This paper describes a methodology that has been incorporated into a fully integrated measurement system, the n&k Analyzer, that determines simultaneously the thickness, energy band gap, and n and k spectra (from 190 to 900 nm) of various forms of silicon, i.e., a-Si, poly-Si films, and mixtures of a-Si and poly-Si films. Additionally, the system also measures the average surface roughness. In turn, the n and k spectra of such films can be correlated to processing conditions, temperature being the most important one in LPCVD method. The n&k Analyzer can be used to identify the amorphous-polycrystalline transition regime and characterization of films produced in this regime.
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Effiong Ibok, Effiong Ibok, Shyam Garg, Shyam Garg, George G. Li, George G. Li, A. Rahim Forouhi, A. Rahim Forouhi, Iris Bloomer, Iris Bloomer, Joel W. Ager, Joel W. Ager, } "Optical characterization of amorphous and polycrystalline silicon films", Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); doi: 10.1117/12.250929; https://doi.org/10.1117/12.250929
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