Real-time preparation-free imaging of mobile charge in SiO2

Lubek Jastrzebski; Piotr Edelman; Jacek J. Lagowski; Andrew M. Hoff; A. Savchouk; Eric Persson

doi:10.1117/12.250934

13 September 1996 Real-time preparation-free imaging of mobile charge in SiO₂

Lubek Jastrzebski, Piotr Edelman, Jacek J. Lagowski, Andrew M. Hoff, A. Savchouk, Eric Persson

Proceedings Volume 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III; (1996) https://doi.org/10.1117/12.250934
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

Recent developments in SiO₂ diagnostics have opened a possibility for measuring the mobile charge in oxide without the expensive and time consuming preparation and analysis of MOS test structures. A key element of the new approach is that corona charge is deposited directly onto the SiO₂, over the entire wafer surface, to create an electric field needed for ion drift. Mobile charge density is determined by mapping of the oxide voltage change after temperature stress. As a result, whole-wafer mobile charge maps with over 6000 points may be acquired in about ten minutes at a sensitivity below 10¹⁰ c^-2 for 100 nm oxides. A distinctive feature of the new technique is that the measurement of oxide voltage shift is done under strong inversion or accumulation and is insensitive to interface traps and oxide fixed charge. In other methods based on the flat band voltage shift these charges near the SiO₂-Si interface are a major limitation.

Citation Download Citation

Lubek Jastrzebski, Piotr Edelman, Jacek J. Lagowski, Andrew M. Hoff, A. Savchouk, and Eric Persson "Real-time preparation-free imaging of mobile charge in SiO₂", Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); https://doi.org/10.1117/12.250934

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