13 September 1996 Spectrophotometry and beam profile reflectometry measurement of six layers in an SOI film stack
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Abstract
We developed a robust measurement recipe for six layer SOI film stack. Both spectrometer and BPR were combined to characterize the plate and storage polysilicons. A new global optimization method was developed to find the best solution in parameter spaces with up to 12 parameters. Such a recipe was applied to production wafers with over 50 site die mapping. The 5 day repeatability shows the measurements were stable and robust.
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JingMin Leng, JingMin Leng, John J. Sidorowich, John J. Sidorowich, Y. D. Yoon, Y. D. Yoon, Jon L. Opsal, Jon L. Opsal, B. H. Lee, B. H. Lee, Giho Cha, Giho Cha, Joo-Tae Moon, Joo-Tae Moon, Sang-In Lee, Sang-In Lee, } "Spectrophotometry and beam profile reflectometry measurement of six layers in an SOI film stack", Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); doi: 10.1117/12.250935; https://doi.org/10.1117/12.250935
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