13 September 1996 Stark effect: a novel method of characterization of low-dimensional heterostructure semiconductor lasers
Author Affiliations +
Abstract
Application of electric field to heterostructure p-n junctions beyond the threshold produces lasing. On further increase of the electric field the peak of the intensity shifts towards red. The line width also increases. In this article it is shown that this shift as well as the change in the line width can be effectively utilized to distinguish the 3D to 0D structures. The shift in the bulk structure exhibits F2/3 power law, where 'F' is the electric field, while 2D, 1D, and 0D samples give rise to a quadratic dependence as in single atoms. In addition elegant modifications in micro-fabricational techniques are suggested as to realize more efficient structures with ease.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. S. V. Gopalam, "Stark effect: a novel method of characterization of low-dimensional heterostructure semiconductor lasers", Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); doi: 10.1117/12.250928; https://doi.org/10.1117/12.250928
PROCEEDINGS
18 PAGES


SHARE
RELATED CONTENT

Quantum wells a driving force of the progress in...
Proceedings of SPIE (March 01 1995)
Single spins in quantum dots and impurities
Proceedings of SPIE (September 15 2011)
Fine and hyperfine structure of quantum dot excitons
Proceedings of SPIE (October 21 2004)
Characterisation of modulation doped quantum dot lasers
Proceedings of SPIE (February 22 2006)
Spin transport in Ge/Si quantum dot array
Proceedings of SPIE (May 28 2004)

Back to Top