Characterization and application of deep Si trench etching

James G. Fleming; Carole Craig Barron

doi:10.1117/12.251223

23 September 1996 Characterization and application of deep Si trench etching

James G. Fleming, Carole Craig Barron

Proceedings Volume 2879, Micromachining and Microfabrication Process Technology II; (1996) https://doi.org/10.1117/12.251223
Event: Micromachining and Microfabrication '96, 1996, Austin, TX, United States

Abstract

A commercially available electron cyclotron resonance etcher has been used to develop deep silicon trench etch processes using SF₆-O₂ chemistries. It was found that the etch rate depends primarily on the delivery of reactant. Aspect ratio dependent etching is more evident in this chemistry than it is in chlorine-based chemistries. Selectivity of the silicon etch rate to the silicon dioxide mask etch rate is determined mostly by the influence of etch power on the silicon dioxide etch rate. Etch anisotropy is determined mostly by temperature and the O4-2) to SF₆ ratio. The high degree of anisotropy attainable under conditions of low temperature and high O₂ ratio must be balanced against the problem of micromasking which is also favored by these conditions. Deep silicon trench etching has the potential to have a major impact on micromachining. However, due to the many interactions between numerous variables each etch process must be tailored to the individual application.

Citation Download Citation

James G. Fleming and Carole Craig Barron "Characterization and application of deep Si trench etching", Proc. SPIE 2879, Micromachining and Microfabrication Process Technology II, (23 September 1996); https://doi.org/10.1117/12.251223

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