Chemically amplified deep UV resists for micromachining

Peter Hudek; Ivo W. Rangelow; Ivan Kostic; Piotr B. Grabiec; Feng Shi

doi:10.1117/12.251206

23 September 1996 Chemically amplified deep UV resists for micromachining

Peter Hudek, Ivo W. Rangelow, Ivan Kostic, Piotr B. Grabiec, Feng Shi

Proceedings Volume 2879, Micromachining and Microfabrication Process Technology II; (1996) https://doi.org/10.1117/12.251206
Event: Micromachining and Microfabrication '96, 1996, Austin, TX, United States

Abstract

The suitability of pattern transfer through multi-component chemically amplified resists (CARs) has been studied. We report on direct-write electron-beam lithographic and reactive ion etching (RIE) experiments with single-layer CARs used for the fabrication of silicon structures with sizes from micro- down to submicrometer scale and high aspect ratio. The 30 keV e-beam response of new types of CARs in thicker layers and the optimization possibilities of the exposure and etching conditions were investigated as well. We measured the basic characteristics of used resists and also the influence of proximity effects. The study includes the effects of resist process variations on the global 3D resist-relief structure. The resolved resist- relief structures at optimized process conditions have shown high aspect ratios with nearly vertical sidewalls. The paper will discuss the deep pattern transfer results into the underlying SiO₂ and/or directly into Si-substrate by using RIE. The results show an etch that has excellent vertical sidewalls free of passivation, and is anisotropic.

Citation Download Citation

Peter Hudek, Ivo W. Rangelow, Ivan Kostic, Piotr B. Grabiec, and Feng Shi "Chemically amplified deep UV resists for micromachining", Proc. SPIE 2879, Micromachining and Microfabrication Process Technology II, (23 September 1996); https://doi.org/10.1117/12.251206

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