23 September 1996 Chemically amplified deep UV resists for micromachining
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Proceedings Volume 2879, Micromachining and Microfabrication Process Technology II; (1996) https://doi.org/10.1117/12.251206
Event: Micromachining and Microfabrication '96, 1996, Austin, TX, United States
Abstract
The suitability of pattern transfer through multi-component chemically amplified resists (CARs) has been studied. We report on direct-write electron-beam lithographic and reactive ion etching (RIE) experiments with single-layer CARs used for the fabrication of silicon structures with sizes from micro- down to submicrometer scale and high aspect ratio. The 30 keV e-beam response of new types of CARs in thicker layers and the optimization possibilities of the exposure and etching conditions were investigated as well. We measured the basic characteristics of used resists and also the influence of proximity effects. The study includes the effects of resist process variations on the global 3D resist-relief structure. The resolved resist- relief structures at optimized process conditions have shown high aspect ratios with nearly vertical sidewalls. The paper will discuss the deep pattern transfer results into the underlying SiO2 and/or directly into Si-substrate by using RIE. The results show an etch that has excellent vertical sidewalls free of passivation, and is anisotropic.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Hudek, Peter Hudek, Ivo W. Rangelow, Ivo W. Rangelow, Ivan Kostic, Ivan Kostic, Piotr B. Grabiec, Piotr B. Grabiec, Feng Shi, Feng Shi, } "Chemically amplified deep UV resists for micromachining", Proc. SPIE 2879, Micromachining and Microfabrication Process Technology II, (23 September 1996); doi: 10.1117/12.251206; https://doi.org/10.1117/12.251206
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