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23 September 1996 Selective SiO2-xFx growth with liquid-phase deposition for MEMS technology
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Proceedings Volume 2879, Micromachining and Microfabrication Process Technology II; (1996) https://doi.org/10.1117/12.251215
Event: Micromachining and Microfabrication '96, 1996, Austin, TX, United States
Abstract
To develop a selectively grown silicon oxide film with low stress for micromachined devices, a novel liquid-phase- deposition (LPD) technique is proposed. LPD-oxide can be grown as the supersaturated concentration of Si(OH)4 reaches a low-limit. The concentration can be controlled y the deposition temperature and the quantity of boric acid (H3BO3) added. Owing to the difference in low-limit between Si and photoresist, a selective LPD process window is thus formed. The selective-growth mechanism has been proposed and confirmed. Detailed understanding is instructive to apply the technology to MEMS devices and microfabrication.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ching-Fa Yeh, Yueh-Chuan Lee, and Jwinn-Lein Su "Selective SiO2-xFx growth with liquid-phase deposition for MEMS technology", Proc. SPIE 2879, Micromachining and Microfabrication Process Technology II, (23 September 1996); https://doi.org/10.1117/12.251215
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