The possibility of fabricating mm-wave radio frequency cavities using deep x-ray lithography (DXRL) is being investigated. The frequency of operation can be from 30 GHz to 300 GHz, operating mode in either TM or TE-mode, depending on the application. For most applications, a complete structure consists of two mirror-image planar half structures assembled face-to-face. The fabrication process includes manufacture of precision x-ray masks, exposure of positive resist by x-rays through the mask, resist development, and electroforming of the final microstructure. The precision hard x-ray mask was made by means of an surface mask, using soft x-ray lithography for pattern transfer into poly-methylmethacrylate (PMMA) on a 200-micrometers thick Si wafer, followed by electroplating of 35-micrometers Au at CXrL (Center of X-ray Lithography) in Wisconsin. For the DXRL process, PMMA was used as the positive resist, either as an 1-mm sheet glued or 200-micrometers film cast onto a Cu substrate. The NSLS (National Synchrotron Light Source) X- 26C beamline in Brookhaven was used to expose the resist. 99.9% OFC (oxygen free copper) was electroplated onto the developed PMMA structure, and then polished by the diamond- lapping. The cavity will be aligned with the optical fibers on the grooves and then initial test will be performed with HP 8510 network analyzer.