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13 September 1996 Transient thermal analysis of micromachined silicon bridge
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Proceedings Volume 2880, Microlithography and Metrology in Micromachining II; (1996)
Event: Micromachining and Microfabrication '96, 1996, Austin, TX, United States
We investigate the transient thermal response of micromachined silicon microbridges. The silicon microbridge has a large potential for sensors relating to heat because silicon has large thermal conductivity. The silicon microbridge is stable in heat cycle compared with the other hetero-structures. The silicon process has an advantage of mass production and good controllability. The silicon microbridge is abruptly heated by its Joule's heat when a voltage pulse is applied. The measured time constant was less than 1 ms because the heat capacity of the microbridge is small. A heavily doped silicon layer which is made by ion implantation works as stopping layer for anisotropic etching process. Furthermore the dependence of resistance on temperature is metallic such that the drive current is automatically controlled with negative feedback. We could easily control the temperature of silicon microbridge by electric signal up to the frequency range of 1 kHz. The temperature modulation was more than 700 degree(s)C at 100 Hz. The microbridge is one of the fastest heater driven by Joule's heat because of the small heat capacity and the large thermal conductivity of silicon.
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Hiroyasu Yuasa, Seishiro Ohya, Shiro Karasawa, Setsuo Kodato, and Kenji Akimoto "Transient thermal analysis of micromachined silicon bridge", Proc. SPIE 2880, Microlithography and Metrology in Micromachining II, (13 September 1996);

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