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23 September 1996 Reflectivity of micromachined {111}-oriented silicon mirrors for optical input/output couplers
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Proceedings Volume 2881, Microelectronic Structures and MEMS for Optical Processing II; (1996) https://doi.org/10.1117/12.251255
Event: Micromachining and Microfabrication '96, 1996, Austin, TX, United States
Abstract
In this work, bulk-micromachined {111}-oriented silicon mirrors at 54.7 degree(s) have been fabricated in 20 wt% KOH solution at various temperatures and characterized with single mode fibers (10/125 and 5/125). In fabricating the mirrors, the etch rate of the (100) silicon surface was widely changed from 5.3 micrometers /hr to 73 micrometers /hr as the processing temperatures were varied from 40 degree(s)C to 80 degree(s)C. In spite of the tremendous variation of etch rate, the measured reflectivities of the mirrors showed fairly stable values of 63.7 - 58% at 1330 nm and 55.4 - 57.7% at 1550 nm respectively. This paper describes the silicon mirror processing conditions, measured reflectivities, reflected beam profiles, and a prototype integrated optical I/O coupler with the realized mirrors. The results obtained from this work show that optical I/O couplers with 54.7 degree(s) mirrors on conventional (100)-oriented silicon wafers are feasible, envisaging a synchronized optical clock distribution system as well as a distributed remote optical sensing system with low manufacturing cost.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel J. Sadler, Maichael J. Garter, Chong Hyuk Ahn, Seungug Koh, and Anthony L. Cook "Reflectivity of micromachined {111}-oriented silicon mirrors for optical input/output couplers", Proc. SPIE 2881, Microelectronic Structures and MEMS for Optical Processing II, (23 September 1996); https://doi.org/10.1117/12.251255
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