Paper
17 September 1996 Antenna-coupled rectifying diode for IR detection
Hideaki Yamagishi, Hitoshi Hara, Nobuhiko Kanbara, Yasushi Onoe, Naoki Kishi
Author Affiliations +
Proceedings Volume 2882, Micromachined Devices and Components II; (1996) https://doi.org/10.1117/12.250727
Event: Micromachining and Microfabrication '96, 1996, Austin, TX, United States
Abstract
An antenna-coupled rectifying SChottky Barrier DIode (SBD) for IR detection is fabricated on Si by IC processes. Aluminum thin film antenna of 30 micrometers length and 1.5 micrometers width is formed on thermally grown SiO2 layer on Si. At the end of antenna, rectifying SBD of 0.03 micrometers diameter is formed by focused ion beam (FIB) milling technique. Ion current monitoring system with FIB largely reduced the size of milled hole, which is conventionally limited by ion beam waist diameter. IR radiation from CO2 laser of 10.6 micrometers in wavelength and 0.55 W in power is used for device evaluations. Signal dependence on incident angle of CO2 laser radiation and dependence on diode bias voltage are evaluated. We confirmed the rectifying operation of antenna- coupled SBD at IR region and experimentally obtained rectified voltage of 173 nV. The NEP is calculated to be 1.94 X 10-6 W/Hz-1/2.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideaki Yamagishi, Hitoshi Hara, Nobuhiko Kanbara, Yasushi Onoe, and Naoki Kishi "Antenna-coupled rectifying diode for IR detection", Proc. SPIE 2882, Micromachined Devices and Components II, (17 September 1996); https://doi.org/10.1117/12.250727
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Cited by 2 scholarly publications.
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KEYWORDS
Diodes

Infrared detection

Antennas

Carbon monoxide

Gas lasers

Ion beams

Silicon

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