Applications of bipolar compatible epitaxial polysilicon

Paul T. J. Gennissen; Patrick J. French

doi:10.1117/12.250723

17 September 1996 Applications of bipolar compatible epitaxial polysilicon

Paul T. J. Gennissen, Patrick J. French

Proceedings Volume 2882, Micromachined Devices and Components II; (1996) https://doi.org/10.1117/12.250723
Event: Micromachining and Microfabrication '96, 1996, Austin, TX, United States

Abstract

In surface micromachining applications thick polysilicon layers are highly desirable. The low deposition rate of LPCVD poly-silicon severely limits the final thickness of the microstructures. This can be overcome by using an epitaxial reactor to grow polysilicon, in which very high deposition rates can be obtained. However, when a complete electronic process is used to fabricate smart sensors, the epipoly will be under compressive strain. The cause of this unwanted strain has been identified and the problem is solved by capping the epipoly with a nitride layer during further processing. In this way thick low-stress epipoly layers grown at the same time as the monocrystalline silicon epilayer required for the electronics, have been obtained. Several test structures, such as thermally actuated indicators, lateral accelerometers and lateral comb drives have been fabricated using this optimized process.

Citation Download Citation

Paul T. J. Gennissen and Patrick J. French "Applications of bipolar compatible epitaxial polysilicon", Proc. SPIE 2882, Micromachined Devices and Components II, (17 September 1996); https://doi.org/10.1117/12.250723

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