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17 September 1996 Micromachined VO2-based uncooled IR bolometric detector arrays with integrated CMOS readout electronics
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Proceedings Volume 2882, Micromachined Devices and Components II; (1996) https://doi.org/10.1117/12.250694
Event: Micromachining and Microfabrication '96, 1996, Austin, TX, United States
Abstract
Uncooled IR bolometric detectors fabricated using surface silicon micromachining are presented. The detector fabrication process employs a polyamide sacrificial layer, and a VO2 thermistor layer exhibiting a thermal coefficient of resistance on the order of -3 percent/degrees C. Detector sizes are 100 micrometers X 100 micrometers and 50 micrometers X 50 micrometers , and 64 X 64 and 128 X 128 pixel arrays are fabricate. The detectors exhibit responsivities of up to 15 000 VW-1, normalized detectivities typically exceeding 108 cm Hz1/2W-1, and response times below 20 ms. Three integrated readout circuit designs for 64 X 64 and 128 X 128 pixel detector arrays, fabricated using a standard 1.5 micrometers CMOS process,a re described. These circuits include several test and detector nonuniformity correction features and can operate in either self scanning mode at a rate of 30 frames per second, or in the random access mode in which column and row addresses are input directly.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hubert Jerominek, Martin Renaud, Nicholas R. Swart, Francis Picard, Timothy D. Pope, Marc Levesque, Mario Lehoux, Ghislain Bilodeau, Martin Pelletier, Danick Audet, and Philippe Lambert "Micromachined VO2-based uncooled IR bolometric detector arrays with integrated CMOS readout electronics", Proc. SPIE 2882, Micromachined Devices and Components II, (17 September 1996); https://doi.org/10.1117/12.250694
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