17 September 1996 Strain sensitive resonant gate transistor
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Proceedings Volume 2882, Micromachined Devices and Components II; (1996); doi: 10.1117/12.250714
Event: Micromachining and Microfabrication '96, 1996, Austin, TX, United States
Abstract
The strain sensitive resonant gate transistor working as a strain gauge has been developed. This device is fabricated by using surface micro-machining techniques and CMOS technology. Poly-Si bridge is fixed to the FET structures and the bridge is encapsulated by a Poly-Si cell in order to keep it inside the vacuum. When the strain is applied to the bridge, the resonant frequency is changed. The shift of resonant frequency is converted to the frequency of alternating drain current. Some basically technological problems are in order to realize high sensitivity and reliability in this sensor. As a result, the strain sensitive sensor with the characterizations of high gage factor, high Q factor, no-sticking and wide-working-range is developed. Characterizations of this sensor have been demonstrated.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shun-ichi Miyazaki, Takashi Yoshida, Kyoichi Ikeda, "Strain sensitive resonant gate transistor", Proc. SPIE 2882, Micromachined Devices and Components II, (17 September 1996); doi: 10.1117/12.250714; https://doi.org/10.1117/12.250714
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KEYWORDS
Transistors

Bridges

Sensors

CMOS technology

Fabrication

Field effect transistors

Micromachining

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