27 December 1996 4X reticles with 3% linewidth control for the development of 0.18-um lithography
Author Affiliations +
Abstract
The present paper reports on the achievement of a 3% linewidth control on experimental 4X reticles for 0.18 micrometers (0.72 micrometers on mask), for all linewidths from 0.15 micrometers (0.6 micrometers on mask) up to several microns at the same time, regardless of the local pattern density (e-beam proximity effect). Keeping in mind that a reduction of the projection demagnification factor of optical wafer steppers from 5X to 4X represents an additional generation of reticles (with 1 micrometers on mask level), it is clear that, compared to commercial mask making, this result consists of successful patterning of experimental reticles of 2 mask generations ahead, with tight linewidth control. A similar accuracy has become required for the fabrication of masks with optical proximity corrected (OPC) data, because this technique needs medium--to far submicron resolution on mask. Results of such experimental OPC masks are presented. The present work focuses on pattern-generation related topics. Inspection and repair are not covered, although even more aggressive improvements may be required there.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rik M. Jonckheere, Rik M. Jonckheere, Jozef Moonens, Jozef Moonens, Goedele Potoms, Goedele Potoms, Inga Bovie, Inga Bovie, Luc Van den Hove, Luc Van den Hove, "4X reticles with 3% linewidth control for the development of 0.18-um lithography", Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); doi: 10.1117/12.262811; https://doi.org/10.1117/12.262811
PROCEEDINGS
12 PAGES


SHARE
Back to Top