27 December 1996 Conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography
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Abstract
In this paper, the deep submicron complementary metal-oxide- semiconductor (CMOS) devices were fabricated. A conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography is used for direct writing the critical polysilicon gate level. Most of the specification of the designed CMOS parameters are met. The optimum conditions for submicron to 0.15 micrometers line/space of polysilicon gate using PAPSAH as charge dissipation layer for e-beam lithography are also established.
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Shyi-Long Shy, T. S. Chao, Tan Fu Lei, Shaw-An Chen, Wen-An Loong, Chun-Yen Chang, "Conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography", Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); doi: 10.1117/12.262831; https://doi.org/10.1117/12.262831
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KEYWORDS
Electron beam lithography

Oxides

Etching

Lithography

Electron beams

Semiconducting wafers

CMOS devices

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