27 December 1996 Development of deep-UV MoSi-based embedded phase-shifting mask (EPSM) blanks
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Abstract
Embedded phase-shift mask (EPSM) has an advantage in comparison with several other phase-shifting mask approaches because of its simple structure and fabrication process. We tried to modify MoSi-based EPSM blanks by re-examining the material and by optimizing sputtering condition in order to produce more useful EPSM blanks for Deep UV lithography technology. New MoSi-based EPSM blanks for which Nitrogen gas is used as the reactive sputtering gas has been developed. And it has been confirmed that the New MoSi-based EPSM (MoSi-N) blanks are superior to HOYA previously developed one (MoSi-ON) in chemical durability, manufacturing stability and Dry Etching property.
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Masao Ushida, Masaru Mitsui, Kimihiri Okada, Yasushi Okubo, Hideki Suda, Hideo Kobayashi, Keishi Asakawa, "Development of deep-UV MoSi-based embedded phase-shifting mask (EPSM) blanks", Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); doi: 10.1117/12.262825; https://doi.org/10.1117/12.262825
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