27 December 1996 Development of deep-UV MoSi-based embedded phase-shifting mask (EPSM) blanks
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Embedded phase-shift mask (EPSM) has an advantage in comparison with several other phase-shifting mask approaches because of its simple structure and fabrication process. We tried to modify MoSi-based EPSM blanks by re-examining the material and by optimizing sputtering condition in order to produce more useful EPSM blanks for Deep UV lithography technology. New MoSi-based EPSM blanks for which Nitrogen gas is used as the reactive sputtering gas has been developed. And it has been confirmed that the New MoSi-based EPSM (MoSi-N) blanks are superior to HOYA previously developed one (MoSi-ON) in chemical durability, manufacturing stability and Dry Etching property.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masao Ushida, Masao Ushida, Masaru Mitsui, Masaru Mitsui, Kimihiri Okada, Kimihiri Okada, Yasushi Okubo, Yasushi Okubo, Hideki Suda, Hideki Suda, Hideo Kobayashi, Hideo Kobayashi, Keishi Asakawa, Keishi Asakawa, } "Development of deep-UV MoSi-based embedded phase-shifting mask (EPSM) blanks", Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); doi: 10.1117/12.262825; https://doi.org/10.1117/12.262825

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