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27 December 1996 Improved PBS process for e-beam photomask lithography
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An improved PBS process has been developed and tested for the photomask production. Significant improvements in CD uniformity (3(sigma) < 40 nm over 6' plates) and CD meant- to-target control (< 30 nm) have been achieved through a specially treated puddle development. A low-temperature bake (95 degree(s)C, 30 minutes) was utilized for better linearity while the resolution was 0.5 micrometers for the regular process and as low as 0.35 micrometers for the ghosting process. Defect densities on production plates have been greatly improved to a level lower than our normal production process. The new process is not limited by any specific type of processor, therefore it can be implemented into current production lines easily. It is expected that this new process will meet advanced specs for 256 M DRAM (with 0.25 micrometers design rule) and extend the life of the PBS production line for another 3 - 4 years.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wayne P. Shen, James W. Marra, and Douglas J. Van Den Broeke "Improved PBS process for e-beam photomask lithography", Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996);

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