27 December 1996 Improved pattern placement in membrane mask making
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Abstract
Pattern placement errors are a problem in the manufacture of masks for proximity X-ray lithography. Many of these errors are attributable to long term drifts in beam position relative to external fiducials. To address this we have developed a technique based on through-the-membrane monitoring of the electron beam position. This uses a solid state detector with high bandwidth and gain mounted near the back surface of the target membrane. An accurately patterned overlayer on the detector provides the fiducial reference. The overlayer is designed to modulate the electron-hole pair current generated in the diode by absorbing the incident beam. Position information is obtained by analyzing the image created from recording the diode current during patterning. The phase in a Fourier transform of the data at the spatial frequency of the patterned absorber gives a measure of the position of the incident beam. Changes in the observed phase from one frame to the next can then be used to correct position errors of the beam in real time. We report results from tests of various components of this system. Early indications are that the system will be sufficiently fast and accurate for proximity X-ray mask pattern placement correction.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Keith Perkins, Christie R. Marrian, Martin C. Peckerar, "Improved pattern placement in membrane mask making", Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); doi: 10.1117/12.262817; https://doi.org/10.1117/12.262817
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