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27 December 1996 Lithography tricks and tribulations
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When considering optical lithography, there is no true substitute for the resolution enhancements afforded by a reduction in actinic radiation. However, as we move below 365 nm i-line systems, the optics and attendant materials considerations become acute. Additionally, there is an obvious economic impetus to breath new life into existing exposure systems. Various optical enhancement schemes have been developed over the past few years for these and other reasons. While many of these are well suited for the patterns and economics of memories, there are a few that enable sub 0.5 kl ASIC imaging. These include: large NA, optical proximity correction, and the deployment of sub- resolution assist features. We will demonstrate a blend of these that will support 280 nm ASIC pattern delineation with i-line (365 nm) systems and binary (non-phase-shift) masks.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joseph G. Garofalo, Pat G. Watson, Lee E. Trimble, Raymond A. Cirelli, Albert Colina, Ilya M. Grodnensky, B. Herrero, A. Dunbar, Frederick R. Peiffer, R. Takahashi, Regine G. Tarascon-Auriol, Willie J. Yarbrough, and Ludwik J. Zych "Lithography tricks and tribulations", Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996);


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