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27 December 1996 Process optimization for thin resists for advanced e-beam reticle fabrication
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There seem to be much activities, in the mask-making industry at present, in re-establishing a new process technique and condition for a conventional high-molecular polymer resist such as PBS rather than in seeking an alternative for advanced e-beam reticle fabrication. We had investigated, and reported at PMJ'96, how to utilize e-beam `thin resist' in order to obtain an improvement in CD linearity as well as an expansion in total process latitude. We found in particular that there seemed to be a threshold in exposure dose required for each individual resist to improve or even to maintain quality pattern edge and CD linearity, which looked to be independent of coating thickness. Accordingly we tried to determine an exact threshold for PBS and ZEP-7000 this time, and re-examined impacts of baking condition and coating thickness in details under a right exposure dose determined beforehand. This paper describes our findings and approaches to improve pattern edge quality, pattern linearity, hole pattern fidelity and so on by optimizing pre-baking condition, by reducing coating thickness, under a desired exposure dose which was determined by our detailed investigation, in regard to high-molecular polymer resist, for advanced e-beam reticle fabrication.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideo Kobayashi, Takao Higuchi, Kazuhide Yamashiro, and Keishi Asakawa "Process optimization for thin resists for advanced e-beam reticle fabrication", Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996);

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