24 September 1996 0.808-μm InGaAsP/GaAs SCH lasers
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Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251922
Event: Photonics China '96, 1996, Beijing, China
This paper presents new results obtained recently in studies of separate confinement structure InGaAsP/lasers. Using Russia's technology, the InGaAsP/GaAs lasers based on QW structure can be produced y a short-time liquid phase epitaxy employing a modified sliding boat technique. The interface abruptness in the InGaAsP/GaAs lasers can be made comparable to the lattice constant. Using 100 GaAs substrates, InGaAsP/GaAs SCH SQW lasers were fabricated and the following values of the main parameters were obtained: lasing wavelength (lambda) equals 808 micrometers , threshold current density Jth equals 100A/cm2, and power conversion efficiency N $eq 56 percent at a CW power of 1W for a laser with a stripe width W equals 100micrometers .
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Baoren Zhu, Baoren Zhu, Xingde Zhang, Xingde Zhang, Baoxue Bo, Baoxue Bo, Baoshun Zhang, Baoshun Zhang, Zonghe Yang, Zonghe Yang, } "0.808-μm InGaAsP/GaAs SCH lasers", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251922; https://doi.org/10.1117/12.251922

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