24 September 1996 Experimental investigation of the doping profile and structure of InGaAsP/InP multiple quantum wells after rapid thermal annealing
Author Affiliations +
Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251903
Event: Photonics China '96, 1996, Beijing, China
Abstract
The influence of rapid thermal annealing (RTA) on the doping profile and the structure of quantum well LD have been investigated by means of Hall measurement, Auger Electron Spectroscopy, and Secondary Ion Mass Spectroscopy methods after certain RTA. It has been discovered that high resistivity layer was formed at the ohmic contact layer after RTA. However, the structure of quantum well LD is not influenced by RTA.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xuejin Yan, Xuejin Yan, Rong Han Wu, Rong Han Wu, Qiming Wang, Qiming Wang, } "Experimental investigation of the doping profile and structure of InGaAsP/InP multiple quantum wells after rapid thermal annealing", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251903; https://doi.org/10.1117/12.251903
PROCEEDINGS
4 PAGES


SHARE
Back to Top